{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11233023","patent":{"patent_number":"US-11233023","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-03-11T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A semiconductor device of an embodiment includes: a semiconductor substrate; a first insulating layer provided on or above the semiconductor substrate; an aluminum layer provided on the first insulating layer; a second insulating layer provided on the first insulating layer, the second insulating layer covering a first region of a surface of the aluminum layer; and an aluminum oxide film provided on a second region other than the first region of the surface of the aluminum layer, the aluminum oxide film including α-alumina as a main component, and a film thickness of the aluminum oxide film being equal to or larger than 0.5 nm and equal to or smaller than 3 nm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"A semiconductor device of an embodiment includes: a semiconductor substrate; a first insulating layer provided on or above the semiconductor substrate; an aluminum layer provided on the first insulati","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11233023","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11233023","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-11233023). https://patentable.app/patents/US-11233023","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11233023","json":"https://patentable.app/api/llm-context/US-11233023","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:26:47.853Z"}