{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11233047","patent":{"patent_number":"US-11233047","title":"Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon","assignee":null,"inventors":[],"filing_date":"2019-06-04T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":23,"abstract":"Apparatus and methods relating to heterolithic microwave integrated circuits HMICs are described. An HMIC can include different semiconductor devices formed from different semiconductor systems in different regions of a same substrate. An HMIC can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon","description":"Apparatus and methods relating to heterolithic microwave integrated circuits HMICs are described. An HMIC can include different semiconductor devices formed from different semiconductor systems in dif","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11233047","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11233047","citation_suggestion":"Patentable. \"Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon\" (US-11233047). https://patentable.app/patents/US-11233047","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11233047","json":"https://patentable.app/api/llm-context/US-11233047","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:38:00.819Z"}