{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11233066","patent":{"patent_number":"US-11233066","title":"Three-dimensional memory device and method for forming the same","assignee":null,"inventors":[],"filing_date":"2020-05-28T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes an N-type doped region of a substrate, an N-type doped semiconductor layer on the N-type doped region, a memory stack including interleaved conductive layers and dielectric layers on the N-type doped semiconductor layer, a channel structure extending vertically through the memory stack and the N-type doped semiconductor layer into the N-type doped region, and a source contact structure extending vertically through the memory stack and the N-type doped semiconductor layer into the N-type doped region. A first lateral dimension of a first portion of the source contact structure surrounded by the N-type doped region is greater than a second lateral dimension of a second portion of the source contact structure surrounded by the memory stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device and method for forming the same","description":"Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes an N-type doped region of a substrate, an N-type doped semiconductor layer o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11233066","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11233066","citation_suggestion":"Patentable. \"Three-dimensional memory device and method for forming the same\" (US-11233066). https://patentable.app/patents/US-11233066","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11233066","json":"https://patentable.app/api/llm-context/US-11233066","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:57:12.849Z"}