{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11233068","patent":{"patent_number":"US-11233068","title":"Nonvolatile memory device having a vertical structure and a memory system including the same","assignee":null,"inventors":[],"filing_date":"2021-03-05T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["G11C","G11C","H01L","H01L","H01L","G11C","G11C"],"num_claims":6,"abstract":"A nonvolatile memory device including: a first semiconductor layer including word lines, bit lines, first and second upper substrates adjacent to each other and a memory cell array, wherein the memory cell array includes a first vertical structure on the first upper substrate and a second vertical structure on the second upper substrate; and a second semiconductor layer under the first semiconductor layer, wherein the second semiconductor layer includes a lower substrate that includes row decoder and page buffer circuits, wherein the first vertical structure includes a first via area in which a first through-hole via is provided, wherein the first through-hole via passes through the first vertical structure and connects a first bit line and a first page buffer circuit, and the second vertical structure includes a first partial block, wherein the first partial block overlaps the first via area."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory device having a vertical structure and a memory system including the same","description":"A nonvolatile memory device including: a first semiconductor layer including word lines, bit lines, first and second upper substrates adjacent to each other and a memory cell array, wherein the memory","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11233068","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11233068","citation_suggestion":"Patentable. \"Nonvolatile memory device having a vertical structure and a memory system including the same\" (US-11233068). https://patentable.app/patents/US-11233068","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11233068","json":"https://patentable.app/api/llm-context/US-11233068","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:26:29.529Z"}