{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11233091","patent":{"patent_number":"US-11233091","title":"Resistive memory cell having a single fin","assignee":null,"inventors":[],"filing_date":"2019-03-04T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"A method for fabricating a semiconductor device including a resistive memory cell having a single fin includes concurrently forming a vertical transistor and a resistive element on a base substrate, including forming a first gate structure corresponding to a gate of the vertical transistor and a second gate structure corresponding to an electrode of the resistive element, forming a top source/drain layer on a fin formed on a bottom source/drain layer disposed on the base substrate, and forming a plurality of contacts. Forming the plurality of contacts includes forming a first contact corresponding to the first gate structure, a second contact corresponding to the top source/drain region and a third contact corresponding to the second gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistive memory cell having a single fin","description":"A method for fabricating a semiconductor device including a resistive memory cell having a single fin includes concurrently forming a vertical transistor and a resistive element on a base substrate, i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11233091","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11233091","citation_suggestion":"Patentable. \"Resistive memory cell having a single fin\" (US-11233091). https://patentable.app/patents/US-11233091","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11233091","json":"https://patentable.app/api/llm-context/US-11233091","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:34:52.728Z"}