{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11233125","patent":{"patent_number":"US-11233125","title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-05-10T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A silicon carbide substrate includes a first impurity region having a first conductivity type, a second impurity region having a second conductivity type, a third impurity region having the first conductivity type, and a fourth impurity region provided between a second main surface and a bottom surface and having the second conductivity type. The first impurity region has a first region being in contact with the second impurity region and having a first impurity concentration, a second region being continuous to the first region, provided between the first region and the second main surface, and having a second impurity concentration lower than the first impurity concentration, and a third region being continuous to the first region and having a third impurity concentration higher than the first impurity concentration. A side surface is in contact with the third region, the second impurity region, and the third impurity region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","description":"A silicon carbide substrate includes a first impurity region having a first conductivity type, a second impurity region having a second conductivity type, a third impurity region having the first cond","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11233125","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11233125","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device\" (US-11233125). https://patentable.app/patents/US-11233125","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11233125","json":"https://patentable.app/api/llm-context/US-11233125","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:34:43.528Z"}