{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11233126","patent":{"patent_number":"US-11233126","title":"SiC epitaxial wafer, semiconductor device, and power converter","assignee":null,"inventors":[],"filing_date":"2019-12-18T00:00:00.000Z","publication_date":"2022-01-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H02M","H02M","H02M","H02M","H02M"],"num_claims":8,"abstract":"A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer disposed on the SiC substrate. The SiC epitaxial layer includes a high carrier concentration layer and two low carrier concentration layers having lower carrier concentration than the high carrier concentration layer, and being in contact with a top surface and a bottom surface of the high carrier concentration layer to sandwich the high carrier concentration layer. A difference in carrier concentration between the high carrier concentration layer and the low carrier concentration layers is 5×1014/cm3 or more and 2×1016/cm3 or less."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SiC epitaxial wafer, semiconductor device, and power converter","description":"A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer disposed on the SiC substrate. The SiC epitaxial layer includes a high carrier concentration layer and two low carrier concentr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11233126","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11233126","citation_suggestion":"Patentable. \"SiC epitaxial wafer, semiconductor device, and power converter\" (US-11233126). https://patentable.app/patents/US-11233126","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11233126","json":"https://patentable.app/api/llm-context/US-11233126","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:36:34.639Z"}