{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11238918","patent":{"patent_number":"US-11238918","title":"Memory device having low write error rate","assignee":null,"inventors":[],"filing_date":"2019-11-21T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":12,"abstract":"A memory device includes a cell array including cells, an address transition detector outputting a transition detection signal as to whether an address of a write command is changed, and a control logic circuit generating one of word-line-on signals for performing a write operation on the cell array in response to the write command, and terminating the write operation in accordance with the transition detection signal. The word-line-on signals include a long-kept word-line-on signal that stays active before the address is changed and a divided word-line-on signal that is, before the address is changed, divided into sub-word-line-on signals."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device having low write error rate","description":"A memory device includes a cell array including cells, an address transition detector outputting a transition detection signal as to whether an address of a write command is changed, and a control log","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11238918","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11238918","citation_suggestion":"Patentable. \"Memory device having low write error rate\" (US-11238918). https://patentable.app/patents/US-11238918","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11238918","json":"https://patentable.app/api/llm-context/US-11238918","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:20:39.933Z"}