{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239111","patent":{"patent_number":"US-11239111","title":"Method of fabricating semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-09-29T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method of fabricating a semiconductor device includes forming a first conductive structure over a substrate, successively forming a first spacer layer, a sacrificial layer, and a second spacer layer on the first conductive structure, forming a second conductive structure adjacent the first conductive structure and in contact with a lower portion of the second spacer layer, partially removing an upper portion of the second spacer layer to expose the sacrificial layer, removing the sacrificial layer through a vapor etch process to form an air gap between the lower portion of the second spacer layer and the first spacer layer, and forming a capping layer to cap the air gap."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating semiconductor device","description":"A method of fabricating a semiconductor device includes forming a first conductive structure over a substrate, successively forming a first spacer layer, a sacrificial layer, and a second spacer layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239111","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239111","citation_suggestion":"Patentable. \"Method of fabricating semiconductor device\" (US-11239111). https://patentable.app/patents/US-11239111","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239111","json":"https://patentable.app/api/llm-context/US-11239111","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:29:46.255Z"}