{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239112","patent":{"patent_number":"US-11239112","title":"Passivating silicide-based approaches for conductive via fabrication and structures resulting therefrom","assignee":null,"inventors":[],"filing_date":"2017-06-20T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"Passivating silicide-based approaches for conductive via fabrication is described. In an example, an integrated circuit structure includes a plurality of conductive lines in an inter-layer dielectric (ILD) layer above a substrate. Each of the plurality of conductive lines is recessed relative to an uppermost surface of the ILD layer. A metal silicide layer is on the plurality of conductive lines, in recess regions above each of the plurality of conductive lines. A hardmask layer is on the metal silicide layer and on the uppermost surface of the ILD layer. A conductive via is in an opening in the hardmask layer and on a portion of the metal silicide layer on one of the plurality of conductive lines."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Passivating silicide-based approaches for conductive via fabrication and structures resulting therefrom","description":"Passivating silicide-based approaches for conductive via fabrication is described. In an example, an integrated circuit structure includes a plurality of conductive lines in an inter-layer dielectric ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239112","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239112","citation_suggestion":"Patentable. \"Passivating silicide-based approaches for conductive via fabrication and structures resulting therefrom\" (US-11239112). https://patentable.app/patents/US-11239112","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239112","json":"https://patentable.app/api/llm-context/US-11239112","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:27:14.373Z"}