{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239117","patent":{"patent_number":"US-11239117","title":"Replacement gate dielectric in three-node access device formation for vertical three dimensional (3D) memory","assignee":null,"inventors":[],"filing_date":"2020-08-27T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["G11C","H01L","H01L","H01L"],"num_claims":20,"abstract":"Systems, methods, and apparatus are provided for storage node after horizontally oriented, three-node access device formation in vertical three dimensional (3D) memory. An example method includes a method for forming arrays of vertically stacked memory cells, having horizontally oriented access devices and vertically oriented access lines. The method includes depositing alternating layers of a dielectric material and a sacrificial semiconductor material to form a vertical stack. A first vertical opening is formed through the vertical stack to expose a first region of the sacrificial semiconductor material. The first region is selectively removed to form a first horizontal opening in which to replace a sacrificial gate dielectric material, form a source/drain conductive contact material, a channel conductive material, and a digit line conductive contact material of the three-node access device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Replacement gate dielectric in three-node access device formation for vertical three dimensional (3D) memory","description":"Systems, methods, and apparatus are provided for storage node after horizontally oriented, three-node access device formation in vertical three dimensional (3D) memory. An example method includes a me","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239117","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239117","citation_suggestion":"Patentable. \"Replacement gate dielectric in three-node access device formation for vertical three dimensional (3D) memory\" (US-11239117). https://patentable.app/patents/US-11239117","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239117","json":"https://patentable.app/api/llm-context/US-11239117","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:37:50.984Z"}