{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239121","patent":{"patent_number":"US-11239121","title":"Metal gate contacts and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2020-09-04T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor device includes providing a structure that includes a substrate, a first fin and a second fin, a first gate structure engaging the first fin, and a second gate structure engaging the second fin; depositing a dielectric layer over the first and second gate structures; etching the dielectric layer, thereby forming a first gate contact opening exposing the first gate structure and a second gate contact opening exposing the second gate structure, wherein the first gate contact opening has a first length that is larger than a second length of the second gate contact opening; and filling the first and second gate contact openings with conductive material, thereby forming a first gate contact engaging the first gate structure and a second gate contact engaging the second gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metal gate contacts and methods of forming the same","description":"A method of forming a semiconductor device includes providing a structure that includes a substrate, a first fin and a second fin, a first gate structure engaging the first fin, and a second gate stru","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239121","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239121","citation_suggestion":"Patentable. \"Metal gate contacts and methods of forming the same\" (US-11239121). https://patentable.app/patents/US-11239121","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239121","json":"https://patentable.app/api/llm-context/US-11239121","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:14:39.542Z"}