{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239161","patent":{"patent_number":"US-11239161","title":"Semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2020-03-03T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","G11C","G11C"],"num_claims":20,"abstract":"A memory device includes a semiconductor layer including adjacent cell and non-cell areas in a first direction, first and second conductive lines on the layer, extending along the first direction and arranged away from each other in a second direction crossing the first direction, conductor layers arranged above the semiconductor layer in a third direction crossing the first and second directions, pillars on the cell area, passing through the conductor layers in the third direction and forming memories at intersections with the conductor layers, and shunt lines extending along the second direction and arranged in the first direction above the cell area, each of the shunt lines connected to the first and second lines via third conductive lines. A length between the shunt line closest to the non-cell area and a boundary between the cell and non-cell areas is less than a length between adjacent shunt lines."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device","description":"A memory device includes a semiconductor layer including adjacent cell and non-cell areas in a first direction, first and second conductive lines on the layer, extending along the first direction and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239161","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239161","citation_suggestion":"Patentable. \"Semiconductor memory device\" (US-11239161). https://patentable.app/patents/US-11239161","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239161","json":"https://patentable.app/api/llm-context/US-11239161","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:57:22.112Z"}