{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239188","patent":{"patent_number":"US-11239188","title":"Terminal structure of a power semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-11-20T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A power semiconductor device includes a semiconductor body configured to conduct a load current. A load terminal electrically connected with the semiconductor body is configured to couple the load current into and/or out of the semiconductor body. The load terminal includes a metallization having a frontside and a backside. The backside interfaces with a surface of the semiconductor body. The frontside is configured to interface with a wire structure having at least one wire configured to conduct at least a part of the load current. The frontside has a lateral structure formed at least by at least one local elevation of the metallization. The local elevation has a height in an extension direction defined by a distance between the base and top of the local elevation and, in a first lateral direction perpendicular to the extension direction, a base width at the base and a top width at the top."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Terminal structure of a power semiconductor device","description":"A power semiconductor device includes a semiconductor body configured to conduct a load current. A load terminal electrically connected with the semiconductor body is configured to couple the load cur","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239188","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239188","citation_suggestion":"Patentable. \"Terminal structure of a power semiconductor device\" (US-11239188). https://patentable.app/patents/US-11239188","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239188","json":"https://patentable.app/api/llm-context/US-11239188","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:33:57.452Z"}