{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239225","patent":{"patent_number":"US-11239225","title":"Three-dimensional integrated circuit structures and methods of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2019-07-17T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Three-dimensional integrated circuit structures and methods of forming the same are disclosed. One of the three-dimensional integrated circuit structures includes a first die, a plurality of second dies and a dielectric structure. The second dies are bonded to the first die. The dielectric structure is disposed between the second dies. The dielectric structure includes a first dielectric layer and a second dielectric layer. The first dielectric layer has a sidewall and a bottom, a first surface of the sidewall and a first surface of the bottom are in contact with the second dielectric layer and form a first angle. A second angle smaller than the first angle is formed by a second surface of the sidewall and a second surface of the bottom."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional integrated circuit structures and methods of manufacturing the same","description":"Three-dimensional integrated circuit structures and methods of forming the same are disclosed. One of the three-dimensional integrated circuit structures includes a first die, a plurality of second di","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239225","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239225","citation_suggestion":"Patentable. \"Three-dimensional integrated circuit structures and methods of manufacturing the same\" (US-11239225). https://patentable.app/patents/US-11239225","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239225","json":"https://patentable.app/api/llm-context/US-11239225","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:33:34.930Z"}