{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239249","patent":{"patent_number":"US-11239249","title":"Vertical-type memory device","assignee":null,"inventors":[],"filing_date":"2019-08-06T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"A vertical-type memory device includes: a first gate structure including first gate electrodes spaced apart from each other and stacked on a substrate; first channel structures penetrating through the first gate structure and being in contact with the substrate; a second gate structure including second gate electrodes spaced apart from each other and stacked on the first gate structure; and second channel structures penetrating through the second gate structure and being in contact with the first channel structures. The first channel structures each may include a first channel layer penetrating the first gate structure, and a first channel pad disposed on the first channel layer and including a first pad region including n-type impurities and a second pad region including p-type impurities."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical-type memory device","description":"A vertical-type memory device includes: a first gate structure including first gate electrodes spaced apart from each other and stacked on a substrate; first channel structures penetrating through the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239249","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239249","citation_suggestion":"Patentable. \"Vertical-type memory device\" (US-11239249). https://patentable.app/patents/US-11239249","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239249","json":"https://patentable.app/api/llm-context/US-11239249","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:55:00.389Z"}