{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239251","patent":{"patent_number":"US-11239251","title":"Method of forming thin layers and method of manufacturing a non-volatile memory device using the same","assignee":null,"inventors":[],"filing_date":"2020-04-22T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":17,"abstract":"A method of manufacturing a non-volatile memory device includes forming a gate insulation layer on a semiconductor substrate having a source layer. The method also includes forming a silicon nitride layer having a buffer-treated upper surface on the gate insulation layer, wherein the buffer-treated upper surface of the silicon nitride layer has a hardness higher than a hardness of the silicon nitride layer. The method further includes forming a silicon oxide layer on the buffer-treated upper surface of the silicon nitride layer. The method additionally includes alternately forming additional silicon nitride layers and additional silicon oxide layers on the silicon oxide layer to form a stack structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming thin layers and method of manufacturing a non-volatile memory device using the same","description":"A method of manufacturing a non-volatile memory device includes forming a gate insulation layer on a semiconductor substrate having a source layer. The method also includes forming a silicon nitride l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239251","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239251","citation_suggestion":"Patentable. \"Method of forming thin layers and method of manufacturing a non-volatile memory device using the same\" (US-11239251). https://patentable.app/patents/US-11239251","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239251","json":"https://patentable.app/api/llm-context/US-11239251","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:47:00.743Z"}