{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239252","patent":{"patent_number":"US-11239252","title":"Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus","assignee":null,"inventors":[],"filing_date":"2020-06-22T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus. In some embodiments the vertically-stacked conductive levels are wordline levels within a NAND memory array. Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. Vertically-stacked NAND memory cells are along the conductive levels within a memory array region. A staircase region is proximate the memory array region. The staircase region has electrical contacts in one-to-one correspondence with the conductive levels. A layer is over the memory array region and over the staircase region. The layer includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus","description":"Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239252","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239252","citation_suggestion":"Patentable. \"Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus\" (US-11239252). https://patentable.app/patents/US-11239252","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239252","json":"https://patentable.app/api/llm-context/US-11239252","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:33:46.405Z"}