{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239327","patent":{"patent_number":"US-11239327","title":"HEMT and method of adjusting electron density of 2DEG","assignee":null,"inventors":[],"filing_date":"2019-07-16T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"A high electron mobility transistor (HEMT) includes a gallium nitride layer. An aluminum gallium nitride layer is disposed on the gallium nitride layer, wherein the aluminum gallium nitride layer comprises a tensile stress. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer between the source electrode and the drain electrode. At least one silicon oxide layer is embedded in the aluminum gallium nitride layer, wherein the silicon oxide layer is formed by a flowable chemical vapor deposition, and the silicon oxide layer increases the tensile stress in the aluminum gallium nitride layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"HEMT and method of adjusting electron density of 2DEG","description":"A high electron mobility transistor (HEMT) includes a gallium nitride layer. An aluminum gallium nitride layer is disposed on the gallium nitride layer, wherein the aluminum gallium nitride layer comp","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239327","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239327","citation_suggestion":"Patentable. \"HEMT and method of adjusting electron density of 2DEG\" (US-11239327). https://patentable.app/patents/US-11239327","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239327","json":"https://patentable.app/api/llm-context/US-11239327","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:08:31.868Z"}