{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239335","patent":{"patent_number":"US-11239335","title":"Structure and method for semiconductor devices","assignee":null,"inventors":[],"filing_date":"2019-09-27T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure provides an integrated circuit (IC) device, including: a semiconductor substrate having a top surface; a first source/drain feature and a second source/drain feature disposed on the semiconductor substrate; and a plurality of semiconductor layers including a first semiconductor layer and a second semiconductor layer. Each of the first semiconductor layer and the second semiconductor layer extends longitudinally in a first direction and connects the first source/drain feature and the second source/drain feature. The first semiconductor layer is stacked over the second semiconductor layer in a second direction perpendicular to the first direction. A length of the first semiconductor layer along the first direction is less than a length of the second semiconductor layer along the first direction. The IC device further includes a gate structure engaging center portions of the first semiconductor layer and the second semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method for semiconductor devices","description":"The present disclosure provides an integrated circuit (IC) device, including: a semiconductor substrate having a top surface; a first source/drain feature and a second source/drain feature disposed on","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239335","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239335","citation_suggestion":"Patentable. \"Structure and method for semiconductor devices\" (US-11239335). https://patentable.app/patents/US-11239335","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239335","json":"https://patentable.app/api/llm-context/US-11239335","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:13:19.117Z"}