{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239343","patent":{"patent_number":"US-11239343","title":"Vertical transistor including symmetrical source/drain extension junctions","assignee":null,"inventors":[],"filing_date":"2020-02-21T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":15,"abstract":"A semiconductor device includes a first source/drain region on an upper surface of a semiconductor substrate that extends along a first direction to define a length and a second direction opposite the first direction to define a width. A channel region extends vertically in a direction perpendicular to the first and second directions from a first end contacting the first source/drain region to an opposing second end contacting a second source/drain region. A gate surrounds a channel portion of the channel region, and a first doped source/drain extension region is located between the first source/drain region and the channel portion. The first doped source/drain extension region has a thickness extending along the vertical direction. A second doped source/drain extension region is located between the second source/drain region and the channel portion. The second doped source/drain extension region has a thickness extending along the vertical direction that matches the first thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical transistor including symmetrical source/drain extension junctions","description":"A semiconductor device includes a first source/drain region on an upper surface of a semiconductor substrate that extends along a first direction to define a length and a second direction opposite the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239343","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239343","citation_suggestion":"Patentable. \"Vertical transistor including symmetrical source/drain extension junctions\" (US-11239343). https://patentable.app/patents/US-11239343","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239343","json":"https://patentable.app/api/llm-context/US-11239343","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:34:37.799Z"}