{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239349","patent":{"patent_number":"US-11239349","title":"Method of manufacturing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-04-02T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":11,"abstract":"A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device and semiconductor device","description":"A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239349","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239349","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device and semiconductor device\" (US-11239349). https://patentable.app/patents/US-11239349","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239349","json":"https://patentable.app/api/llm-context/US-11239349","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:24:09.641Z"}