{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239351","patent":{"patent_number":"US-11239351","title":"Semiconductor device with a LOCOS trench","assignee":null,"inventors":[],"filing_date":"2018-01-04T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A gate controlled semiconductor device comprising a collector region of a first conductivity type; a drift region of a second conductivity type located over the collector region; a body region of a first conductivity type located over the drift region; at least one first contact region of a second conductivity type located above the body region and having a higher doping concentration compared to the body region. The device further comprises at least one second contact region of a first conductivity type located laterally adjacent to the at least one first contact region, the at least one second contact region having a higher doping concentration than the body region. The device further comprises at least one active trench extending from a surface into the drift region, in which the at least one first contact region adjoins the at least one active trench so that, in use, a channel region is formed along said at least one active trench and within the body region. The at least one active trench comprises: two vertical sidewalls and a bottom surface between the two vertical sidewalls; and an insulation layer along the vertical side walls and the bottom surface, wherein the insulation layer along at least one vertical side wall comprises different thicknesses; at least one auxiliary trench extending from the surface into the drift region. The at least one auxiliary trench comprises: two vertical sidewalls and a bottom surface between the two vertical sidewalls; and an insulation layer along the vertical side walls and the bottom surface, wherein the insulation layer along at least one vertical side wall comprises a constant thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with a LOCOS trench","description":"A gate controlled semiconductor device comprising a collector region of a first conductivity type; a drift region of a second conductivity type located over the collector region; a body region of a fi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239351","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239351","citation_suggestion":"Patentable. \"Semiconductor device with a LOCOS trench\" (US-11239351). https://patentable.app/patents/US-11239351","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239351","json":"https://patentable.app/api/llm-context/US-11239351","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:46:21.005Z"}