{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239356","patent":{"patent_number":"US-11239356","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-10-03T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A semiconductor device includes an N-type silicon carbide layer, a P-type region, an N-type source region, a P-type contact region, a gate insulating film, a gate electrode, and a source electrode on the front surface side of an N-type silicon carbide substrate. A drain electrode is located on the back surface of the N-type silicon carbide substrate. A life time killer introduction region is located along an entire interface of the N-type silicon carbide layer and the bottom face of the P-type region. The life time killer is introduced by implanting helium or protons from the back surface side of the N-type silicon carbide substrate after forming a surface structure of an element on the front surface side of the N-type silicon carbide substrate and before forming the drain electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"A semiconductor device includes an N-type silicon carbide layer, a P-type region, an N-type source region, a P-type contact region, a gate insulating film, a gate electrode, and a source electrode on ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239356","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239356","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-11239356). https://patentable.app/patents/US-11239356","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239356","json":"https://patentable.app/api/llm-context/US-11239356","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:36:10.095Z"}