{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239358","patent":{"patent_number":"US-11239358","title":"Semiconductor structure with isolation structures in doped region and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2020-01-17T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A semiconductor structure and fabrication method are provided. The method includes: providing a substrate with a first doped region and a second doped region; forming discrete first isolation structures in the second doped region; forming a third doped region in the second doped region between adjacent first isolation structures and under the first isolation structures; forming a gate structure; forming a source region in the first doped region; and forming a drain region in the second doped region. The first doped region includes first doping ions and the second doped region includes second doping ions with a conductivity type opposite to a conductivity type of the first doping ions. The third doped region includes third doping ions with a conductivity type opposite to the conductivity type of the second doping ions. A portion of the first isolation structure is located between the gate structure and the drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure with isolation structures in doped region and fabrication method thereof","description":"A semiconductor structure and fabrication method are provided. The method includes: providing a substrate with a first doped region and a second doped region; forming discrete first isolation structur","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239358","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239358","citation_suggestion":"Patentable. \"Semiconductor structure with isolation structures in doped region and fabrication method thereof\" (US-11239358). https://patentable.app/patents/US-11239358","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239358","json":"https://patentable.app/api/llm-context/US-11239358","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:13:31.769Z"}