{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11239360","patent":{"patent_number":"US-11239360","title":"Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy","assignee":null,"inventors":[],"filing_date":"2020-01-15T00:00:00.000Z","publication_date":"2022-02-01T00:00:00.000Z","cpc_codes":["H01L","B82Y"],"num_claims":19,"abstract":"A method of forming a vertical transport field effect transistor is provided. The method includes forming a vertical fin on a substrate, and a top source/drain on the vertical fin. The method further includes thinning the vertical fin to form a thinned portion, a tapered upper portion, and a tapered lower portion from the vertical fin. The method further includes depositing a gate dielectric layer on the thinned portion, tapered upper portion, and tapered lower portion of the vertical fin, wherein the gate dielectric layer has an angled portion on each of the tapered upper portion and tapered lower portion. The method further includes depositing a work function metal layer on the gate dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy","description":"A method of forming a vertical transport field effect transistor is provided. The method includes forming a vertical fin on a substrate, and a top source/drain on the vertical fin. The method further ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11239360","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11239360","citation_suggestion":"Patentable. \"Vertical transport field effect transistor structure with self-aligned top junction through early top source/drain epitaxy\" (US-11239360). https://patentable.app/patents/US-11239360","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11239360","json":"https://patentable.app/api/llm-context/US-11239360","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:16:43.695Z"}