{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11243468","patent":{"patent_number":"US-11243468","title":"Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method","assignee":null,"inventors":[],"filing_date":"2019-09-09T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":17,"abstract":"A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): R1 and R2 each independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of R1 and R2 represents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or R1 and R2 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R1 and R2 bond."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method","description":"A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group rep","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11243468","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11243468","citation_suggestion":"Patentable. \"Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method\" (US-11243468). https://patentable.app/patents/US-11243468","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11243468","json":"https://patentable.app/api/llm-context/US-11243468","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:01:51.187Z"}