{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11244821","patent":{"patent_number":"US-11244821","title":"Method for preparing isolation area of gallium oxide device","assignee":null,"inventors":[],"filing_date":"2020-09-29T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"The present disclosure discloses a method for preparing an isolation area of a gallium oxide device, the method comprising: depositing a mask layer on a gallium oxide material; removing a preset portion region of the mask layer; preparing an isolation area in a position, corresponding to the preset portion region, on the gallium oxide material by using a high-temperature oxidation technique, with the isolation area being located between active areas of the gallium oxide device; and removing the remaining mask layer on the gallium oxide material. In the disclosure, the isolation area is prepared by using the high-temperature oxidation technique, which prevents damage to the gallium oxide device during the preparation of the isolation area, thereby achieving isolation between the active areas of the gallium oxide device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for preparing isolation area of gallium oxide device","description":"The present disclosure discloses a method for preparing an isolation area of a gallium oxide device, the method comprising: depositing a mask layer on a gallium oxide material; removing a preset porti","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11244821","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11244821","citation_suggestion":"Patentable. \"Method for preparing isolation area of gallium oxide device\" (US-11244821). https://patentable.app/patents/US-11244821","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11244821","json":"https://patentable.app/api/llm-context/US-11244821","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:22:28.226Z"}