{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11244826","patent":{"patent_number":"US-11244826","title":"Crystal growth method and semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2019-01-22T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A crystal growth method of the present disclosure includes: preparing a substrate having a surface layer; forming a mask pattern including a plurality of strip bodies on the surface layer to separate the surface layer into segments by the plurality of strip bodies and expose part of the surface layer; and forming, on a plurality of growth regions constituted by the exposed part of the surface layer, a crystal growth-derived layer by causing a semiconductor crystal which differs in lattice constant from the substrate to grow by a vapor-phase growth process. Each of the plurality of strip bodies has side faces inclined so that a width between the side faces gradually decreases with distance from the surface layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Crystal growth method and semiconductor device manufacturing method","description":"A crystal growth method of the present disclosure includes: preparing a substrate having a surface layer; forming a mask pattern including a plurality of strip bodies on the surface layer to separate ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11244826","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11244826","citation_suggestion":"Patentable. \"Crystal growth method and semiconductor device manufacturing method\" (US-11244826). https://patentable.app/patents/US-11244826","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11244826","json":"https://patentable.app/api/llm-context/US-11244826","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:15:09.724Z"}