{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11244830","patent":{"patent_number":"US-11244830","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2020-04-27T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a hard mask over an epitaxy layer of a substrate; forming a patterned mask over the hard mask; etching the hard mask and the epitaxy layer to form a trench in the epitaxy layer, in which a remaining portion of the hard mask covers a topmost surface of the epitaxy layer, and the trench exposes a sidewall of the epitaxy layer; forming a P-well region by directing p-type ion beams into the trench along an oblique direction that is non-parallel to a normal line of the topmost surface of the epitaxy layer, in which the topmost surface of the epitaxy layer is protected from the p-type ion beams by the remaining portion of the hard mask during directing the p-type ion beams into the trench; and after directing the p-type ion beams into the trench, forming a gate structure in the trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A method includes forming a hard mask over an epitaxy layer of a substrate; forming a patterned mask over the hard mask; etching the hard mask and the epitaxy layer to form a trench in the epitaxy lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11244830","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11244830","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-11244830). https://patentable.app/patents/US-11244830","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11244830","json":"https://patentable.app/api/llm-context/US-11244830","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:26:24.898Z"}