{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11244831","patent":{"patent_number":"US-11244831","title":"Depletion mode semiconductor devices including current dependent resistance","assignee":null,"inventors":[],"filing_date":"2019-07-03T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":46,"abstract":"A transistor device is provided. The transistor device includes a substrate, a channel layer on the substrate, the channel layer including a GaN material, a barrier layer that is on the channel layer and that includes an AlGaN material, a drain electrode that is on the barrier layer in a drain region of the device, a source ohmic structure that is at least partially recessed into the barrier layer in a source region of the device, a source electrode that is on the source ohmic structure and a gate contact that is on the barrier layer and that is in a gate region of the device that is between the drain region and the source region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Depletion mode semiconductor devices including current dependent resistance","description":"A transistor device is provided. The transistor device includes a substrate, a channel layer on the substrate, the channel layer including a GaN material, a barrier layer that is on the channel layer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11244831","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11244831","citation_suggestion":"Patentable. \"Depletion mode semiconductor devices including current dependent resistance\" (US-11244831). https://patentable.app/patents/US-11244831","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11244831","json":"https://patentable.app/api/llm-context/US-11244831","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:13:29.673Z"}