{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11244833","patent":{"patent_number":"US-11244833","title":"Self-aligned two-time forming method capable of preventing sidewalls from being deformed","assignee":null,"inventors":[],"filing_date":"2021-01-06T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"The present disclosure provides a self-aligned two-time forming method capable of preventing sidewalls from being deformed, comprises sequentially growing a first silicon nitride layer, a first silicon oxide layer, a titanium nitride layer, a second silicon oxide layer, a second silicon nitride layer and a polysilicon layer on a via layer from bottom to top; defining a pattern by using the polysilicon layer as a hard mask, and etching the second silicon nitride layer to an upper surface of the second silicon oxide layer to form a plurality of silicon nitride pattern structures from the second silicon nitride layer; forming sidewalls on sidewalls of the plurality of silicon nitride pattern structures; removing the silicon nitride pattern structures in the sidewalls; etching the silicon nitride layer and the titanium nitride layer by using the sidewalls as a hard mask to form a titanium nitride pattern structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned two-time forming method capable of preventing sidewalls from being deformed","description":"The present disclosure provides a self-aligned two-time forming method capable of preventing sidewalls from being deformed, comprises sequentially growing a first silicon nitride layer, a first silico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11244833","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11244833","citation_suggestion":"Patentable. \"Self-aligned two-time forming method capable of preventing sidewalls from being deformed\" (US-11244833). https://patentable.app/patents/US-11244833","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11244833","json":"https://patentable.app/api/llm-context/US-11244833","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:06:42.300Z"}