{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11244852","patent":{"patent_number":"US-11244852","title":"Method for manufacturing bonded SOI wafer","assignee":null,"inventors":[],"filing_date":"2019-10-11T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"The present invention is a method for manufacturing a bonded SOI wafer, including: preparing, as a base wafer, a silicon single crystal wafer whose initial interstitial oxygen concentration is 15 ppma or more ('79ASTM); forming a silicon oxide film on a surface of the base wafer by heating the base wafer in an oxidizing atmosphere such that a feeding temperature at which the base wafer is fed into a heat treatment furnace for the heat treatment is 800° C. or more, and the base wafer is heated at the feeding temperature or higher; bonding the base wafer to the bond wafer with the silicon oxide film interposed therebetween; and thinning the bonded bond wafer to form an SOI layer. This provides a method for manufacturing a bonded SOI wafer by a base oxidation method which suppresses the formation of oxide precipitates in a base wafer while suppressing slip dislocation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing bonded SOI wafer","description":"The present invention is a method for manufacturing a bonded SOI wafer, including: preparing, as a base wafer, a silicon single crystal wafer whose initial interstitial oxygen concentration is 15 ppma","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11244852","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11244852","citation_suggestion":"Patentable. \"Method for manufacturing bonded SOI wafer\" (US-11244852). https://patentable.app/patents/US-11244852","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11244852","json":"https://patentable.app/api/llm-context/US-11244852","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:16:33.202Z"}