{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11244871","patent":{"patent_number":"US-11244871","title":"Methods of fabricating semiconductor devices for tightening spacing between nanosheets in GAA structures and structures formed thereby","assignee":null,"inventors":[],"filing_date":"2019-06-27T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method of fabricating semiconductor devices includes forming a plurality of first and second semiconductor nanosheets in p-type and n-type device regions, respectively. An n-type work function layer is deposited to surround each of the first and second semiconductor nanosheets. A passivation layer is deposited on the n-type work function layer to surround each of the first and second semiconductor nanosheets. A patterned mask is formed on the passivation layer in the n-type device region, and the n-type work function layer and the passivation layer in the p-type device region are removed in an etching process using the patterned mask as an etching mask. Then, the patterned mask is removed, and a p-type work function layer is deposited to surround the first semiconductor nanosheets and to cover the passivation layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of fabricating semiconductor devices for tightening spacing between nanosheets in GAA structures and structures formed thereby","description":"A method of fabricating semiconductor devices includes forming a plurality of first and second semiconductor nanosheets in p-type and n-type device regions, respectively. An n-type work function layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11244871","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11244871","citation_suggestion":"Patentable. \"Methods of fabricating semiconductor devices for tightening spacing between nanosheets in GAA structures and structures formed thereby\" (US-11244871). https://patentable.app/patents/US-11244871","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11244871","json":"https://patentable.app/api/llm-context/US-11244871","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T22:30:03.668Z"}