{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11244925","patent":{"patent_number":"US-11244925","title":"Semiconductor device structure with back-side layer to reduce leakage","assignee":null,"inventors":[],"filing_date":"2020-08-31T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure relates to a method of forming a semiconductor device structure. The method may be performed by forming a gate structure along a first side of a semiconductor substrate. The semiconductor substrate is thinned. Thinning the semiconductor substrate causes defects to form along a second side of the semiconductor substrate opposing the first side of the semiconductor substrate. Dopants are implanted into the second side of the semiconductor substrate after thinning the semiconductor substrate. The semiconductor substrate is annealed to form a doped layer after implanting the dopants. The doped layer is formed along the second side of the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device structure with back-side layer to reduce leakage","description":"The present disclosure relates to a method of forming a semiconductor device structure. The method may be performed by forming a gate structure along a first side of a semiconductor substrate. The sem","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11244925","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11244925","citation_suggestion":"Patentable. \"Semiconductor device structure with back-side layer to reduce leakage\" (US-11244925). https://patentable.app/patents/US-11244925","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11244925","json":"https://patentable.app/api/llm-context/US-11244925","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:56:42.546Z"}