{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11244953","patent":{"patent_number":"US-11244953","title":"Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the same","assignee":null,"inventors":[],"filing_date":"2020-02-26T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":13,"abstract":"A three-dimensional memory device includes an alternating stack of insulating layers and word lines that are made of molybdenum layers located over a substrate, and memory stack structures extending through each layer in the alternating stack. Each of the memory stack structures includes a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. Each memory film includes a vertical stack of discrete tubular dielectric metal oxide spacers in contact with a respective one of the molybdenum layers, a continuous silicon oxide blocking dielectric layer contacting an inner sidewall of each of the tubular dielectric metal oxide spacers, a vertical stack of charge storage material portions, and a tunneling dielectric layer contacting each of the charge storage material portions and the vertical semiconductor channel."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the same","description":"A three-dimensional memory device includes an alternating stack of insulating layers and word lines that are made of molybdenum layers located over a substrate, and memory stack structures extending t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11244953","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11244953","citation_suggestion":"Patentable. \"Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the same\" (US-11244953). https://patentable.app/patents/US-11244953","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11244953","json":"https://patentable.app/api/llm-context/US-11244953","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T20:33:55.576Z"}