{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11244954","patent":{"patent_number":"US-11244954","title":"Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies","assignee":null,"inventors":[],"filing_date":"2019-08-22T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":30,"abstract":"Some embodiments include a NAND memory array having a vertical stack of alternating insulative levels and conductive levels. The conductive levels include control gate regions. High-k dielectric material is adjacent to the control gate regions and is configured as an arrangement of first vertically-extending linear segments which are vertically spaced from one another. Charge-blocking material is adjacent to the high-k dielectric material and is configured as an arrangement of second vertically-extending linear segments which are vertically spaced from one another. Charge-storage material is adjacent to the charge-blocking material and is configured as an arrangement of third vertically-extending linear segments which are vertically spaced from one another. Gate-dielectric material is adjacent to the charge-storage material. Channel material extends vertically along the stack and is adjacent to the gate-dielectric material. Some embodiments include integrated assemblies and methods of forming integrated assemblies."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies","description":"Some embodiments include a NAND memory array having a vertical stack of alternating insulative levels and conductive levels. The conductive levels include control gate regions. High-k dielectric mater","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11244954","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11244954","citation_suggestion":"Patentable. \"Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies\" (US-11244954). https://patentable.app/patents/US-11244954","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11244954","json":"https://patentable.app/api/llm-context/US-11244954","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:16:50.506Z"}