{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11244999","patent":{"patent_number":"US-11244999","title":"Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end","assignee":null,"inventors":[],"filing_date":"2019-07-03T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"Artificial synaptic devices with an HfO2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400° C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end","description":"Artificial synaptic devices with an HfO2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11244999","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11244999","citation_suggestion":"Patentable. \"Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end\" (US-11244999). https://patentable.app/patents/US-11244999","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11244999","json":"https://patentable.app/api/llm-context/US-11244999","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T19:16:51.790Z"}