{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11245004","patent":{"patent_number":"US-11245004","title":"Memory cell with isolated well region and associated non-volatile memory","assignee":null,"inventors":[],"filing_date":"2020-09-30T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A non-volatile memory includes a substrate region, a barrier layer, an N-type well region, an isolation structure, a first gate structure, a first sidewall insulator, a first P-type doped region, a second P-type doped region and an N-type doped region. The isolation structure is arranged around the N-type well region and formed over the barrier layer. The N-type well region is surrounded by the isolation structure and the barrier layer. Consequently, the N-type well region is an isolation well region. The first gate structure is formed over a surface of the N-type well region. The first sidewall insulator is arranged around the first gate structure. The first P-type doped region, the second P-type doped region and the N-type doped region are formed under the surface of the N-type well region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cell with isolated well region and associated non-volatile memory","description":"A non-volatile memory includes a substrate region, a barrier layer, an N-type well region, an isolation structure, a first gate structure, a first sidewall insulator, a first P-type doped region, a se","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11245004","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11245004","citation_suggestion":"Patentable. \"Memory cell with isolated well region and associated non-volatile memory\" (US-11245004). https://patentable.app/patents/US-11245004","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11245004","json":"https://patentable.app/api/llm-context/US-11245004","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:43:27.081Z"}