{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11245010","patent":{"patent_number":"US-11245010","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-09-03T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":8,"abstract":"A semiconductor device having a semiconductor substrate that includes a first-conductivity-type substrate and a first-conductivity-type epitaxial layer, and a plurality of trenches reaching a predetermined depth from a main surface of the semiconductor substrate to terminate in the first-conductivity-type epitaxial layer. The semiconductor substrate includes a hydrogen-donor introduced part, of which a concentration of a hydrogen donor is greatest at a depth position that is separate from bottoms of the trenches by a distance at least two times of the depth of the trenches. The impurity concentration of an impurity dopant of the first-conductivity-type substrate being lower than that of the first-conductivity-type epitaxial layer. A difference between a first resistivity, corresponding to a total impurity concentration of the impurity dopant and the hydrogen donor of the first-conductivity-type substrate, and a second resistivity, corresponding to the impurity concentration of the impurity dopant of the first-conductivity-type epitaxial layer, is at most 20%."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"A semiconductor device having a semiconductor substrate that includes a first-conductivity-type substrate and a first-conductivity-type epitaxial layer, and a plurality of trenches reaching a predeter","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11245010","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11245010","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-11245010). https://patentable.app/patents/US-11245010","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11245010","json":"https://patentable.app/api/llm-context/US-11245010","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T22:30:02.488Z"}