{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11245016","patent":{"patent_number":"US-11245016","title":"Silicon carbide trench semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-01-31T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor apparatus has a silicon carbide substrate heavily doped with the first conductivity type and a lightly doped silicon carbide drift region of the first conductivity type over the silicon carbide substrate. A first body region in the drift region is doped with second conductivity type opposite the first. A first source region in the first body region is heavily doped with the first conductivity type. A gate trench is formed in the first source region and first body region. At least one sidewall of the gate trench is parallel to a crystal plane of the silicon carbide structure having greater carrier mobility than a C-face thereof. The gate trench extends a length of the first body region and the source region to a separation region laterally adjacent to the first region wherein the separation region is in the drift region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide trench semiconductor device","description":"A semiconductor apparatus has a silicon carbide substrate heavily doped with the first conductivity type and a lightly doped silicon carbide drift region of the first conductivity type over the silico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11245016","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11245016","citation_suggestion":"Patentable. \"Silicon carbide trench semiconductor device\" (US-11245016). https://patentable.app/patents/US-11245016","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11245016","json":"https://patentable.app/api/llm-context/US-11245016","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:13:32.618Z"}