{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11245040","patent":{"patent_number":"US-11245040","title":"Semiconductor device and method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-02-21T00:00:00.000Z","publication_date":"2022-02-08T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"A semiconductor device having a high on-state current is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a first conductor and a second conductor that are apart from each other over the first oxide; a second insulator covering the first insulator, the first oxide, the first conductor, and the second conductor; a third insulator over the second insulator; a fourth insulator in contact with a first conductor, a side surface of the second conductor, a side surface of the second insulator, and a side surface of the third insulator; a fifth insulator that is over the first oxide and on an inner side of the fourth insulator; a third conductor on an inner side of the fifth insulator; and a sixth insulator that is in contact with a top surface of the fourth insulator and over the third insulator, the fifth insulator, and the third conductor. The fourth insulator is divided to be apart from each other over the first oxide."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing semiconductor device","description":"A semiconductor device having a high on-state current is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a first conductor and a second conductor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11245040","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11245040","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing semiconductor device\" (US-11245040). https://patentable.app/patents/US-11245040","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11245040","json":"https://patentable.app/api/llm-context/US-11245040","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:14:46.587Z"}