{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11250896","patent":{"patent_number":"US-11250896","title":"Valley spin hall effect based non-volatile memory","assignee":null,"inventors":[],"filing_date":"2020-06-23T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"A memory cell is disclosed which includes a conductive layer, an insulating layer disposed atop the conducting layer, a semiconductor layer disposed atop the insulating layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another and wherein the semiconductor layer extends beyond the first and second electrodes forming a first wing, a third electrode coupled to the conductive layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Valley spin hall effect based non-volatile memory","description":"A memory cell is disclosed which includes a conductive layer, an insulating layer disposed atop the conducting layer, a semiconductor layer disposed atop the insulating layer, a first electrode couple","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11250896","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11250896","citation_suggestion":"Patentable. \"Valley spin hall effect based non-volatile memory\" (US-11250896). https://patentable.app/patents/US-11250896","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11250896","json":"https://patentable.app/api/llm-context/US-11250896","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T21:55:41.683Z"}