{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11250897","patent":{"patent_number":"US-11250897","title":"Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory","assignee":null,"inventors":[],"filing_date":"2020-11-20T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":17,"abstract":"Provided is a spin current magnetization rotational element, including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring which extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, the first ferromagnetic metal layer being located on one surface of the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, a number of a plurality of the interfacial spin generation layers is two or more, and at least one of the plurality of the interfacial spin generation layer is made of a compound."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory","description":"Provided is a spin current magnetization rotational element, including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring which extends in a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11250897","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11250897","citation_suggestion":"Patentable. \"Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory\" (US-11250897). https://patentable.app/patents/US-11250897","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11250897","json":"https://patentable.app/api/llm-context/US-11250897","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:15:57.650Z"}