{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11250916","patent":{"patent_number":"US-11250916","title":"Vertical memory device having improved electrical characteristics and method of operating the same","assignee":null,"inventors":[],"filing_date":"2021-02-11T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A memory device including at least one dummy word line over a substrate; a plurality of word lines over the dummy word line; and a plurality of vertical holes extending through the at least one dummy word line and the plurality of word lines in a direction perpendicular to the substrate and classified into channel holes and dummy holes, each of the channel holes being connected to a bit line. The method including performing an erase operation on dummy cells formed as the dummy word line and the dummy holes; verifying the erase operation; and performing a program operation on at least one of the dummy cells such that the at least one dummy cell has a higher threshold voltage than main cells formed as the dummy word line and the channel holes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical memory device having improved electrical characteristics and method of operating the same","description":"A memory device including at least one dummy word line over a substrate; a plurality of word lines over the dummy word line; and a plurality of vertical holes extending through the at least one dummy ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11250916","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11250916","citation_suggestion":"Patentable. \"Vertical memory device having improved electrical characteristics and method of operating the same\" (US-11250916). https://patentable.app/patents/US-11250916","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11250916","json":"https://patentable.app/api/llm-context/US-11250916","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:36:43.869Z"}