{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251049","patent":{"patent_number":"US-11251049","title":"Etching method and plasma processing apparatus","assignee":null,"inventors":[],"filing_date":"2020-04-06T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"In an etching method, a target object temperature is maintained within a range from −30° C. to 30° C. When a flow rate of an ith fluorocarbon gas in one or multiple fluorocarbon gases is referred to as J(i); a number of fluorine atoms and a number of carbon atoms in the corresponding gas are referred to as M(i) and N(i), respectively; a value calculated by summing J(i)×N(i)/M(i) of all values that i can be is referred to as Ua; a flow rate of a kth hydrogen-containing gas in one or multiple hydrogen-containing gases is referred to as J(k); a number of hydrogen atoms in the corresponding gas is referred to as H(k); and a value calculated by summing J(k)×H(k) of all values that k can be is referred to as Ub, Ua/Ub satisfies a condition of 0.04