{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251051","patent":{"patent_number":"US-11251051","title":"Dry etching method","assignee":null,"inventors":[],"filing_date":"2019-10-16T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"A dry etching method according to the present disclosure is for forming a through hole in a laminated film of silicon oxide layers and silicon nitride layers on a substrate in a direction vertical to the laminated film by plasmatizing a dry etching agent to generate a plasma and etching the laminated film by the plasma through a mask having a predetermined opening pattern under a negative direct-current self-bias voltage whose absolute value is 500 V or greater, wherein the dry etching agent contains at least C3F6, a hydrogen-containing saturated fluorocarbon represented by CxHyFz and an oxidizing gas, and wherein the volume of the hydrogen-containing saturated fluorocarbon contained in the dry etching agent is in a range of 0.1 to 10 times the volume of C3F6 contained in the dry etching agent."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dry etching method","description":"A dry etching method according to the present disclosure is for forming a through hole in a laminated film of silicon oxide layers and silicon nitride layers on a substrate in a direction vertical to ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251051","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251051","citation_suggestion":"Patentable. \"Dry etching method\" (US-11251051). https://patentable.app/patents/US-11251051","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251051","json":"https://patentable.app/api/llm-context/US-11251051","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:44:50.565Z"}