{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251069","patent":{"patent_number":"US-11251069","title":"Method for forming isolation with multi-step structure","assignee":null,"inventors":[],"filing_date":"2020-09-11T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device structure is provided. The method includes forming first and second well regions with different conductivity types in a semiconductor substrate. A well interface is formed between the first and second well regions. The method also includes patterning the semiconductor substrate to form a first fin structure in the first well region, a second fin structure in the second well region, and a first trench between the first and second fin structures. The first trench exposes the well interface in the semiconductor substrate. The method further includes forming insulating spacers on opposite sidewalls of the first trench and etching the semiconductor substrate below the first trench using the insulating spacers as an etch mask, to form a second trench below the first trench. In addition, the method includes filling the first and second trenches with an insulating material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming isolation with multi-step structure","description":"A method for forming a semiconductor device structure is provided. The method includes forming first and second well regions with different conductivity types in a semiconductor substrate. A well inte","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251069","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251069","citation_suggestion":"Patentable. \"Method for forming isolation with multi-step structure\" (US-11251069). https://patentable.app/patents/US-11251069","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251069","json":"https://patentable.app/api/llm-context/US-11251069","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:45:24.984Z"}