{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251078","patent":{"patent_number":"US-11251078","title":"Formation method of semiconductor device with fin structures","assignee":null,"inventors":[],"filing_date":"2020-01-17T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device structure is provided. The method includes forming a first conductive feature over a semiconductor substrate. The method includes forming an oxygen-absorbing layer on a surface of the first conductive feature. The oxygen-absorbing layer absorbs oxygen from the first conductive feature and becomes an oxygen-containing layer. The method includes removing the oxygen-containing layer to expose the surface originally covered by the oxygen-containing layer. The method includes forming a metal-containing layer on the surface. The method includes forming a second conductive feature on the metal-containing layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Formation method of semiconductor device with fin structures","description":"A method for forming a semiconductor device structure is provided. The method includes forming a first conductive feature over a semiconductor substrate. The method includes forming an oxygen-absorbin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251078","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251078","citation_suggestion":"Patentable. \"Formation method of semiconductor device with fin structures\" (US-11251078). https://patentable.app/patents/US-11251078","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251078","json":"https://patentable.app/api/llm-context/US-11251078","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:56:07.715Z"}