{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11251087","patent":{"patent_number":"US-11251087","title":"Semiconductor device including a Fin-FET and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2020-06-09T00:00:00.000Z","publication_date":"2022-02-15T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor device including a fin field effect transistor (FinFET) includes forming a first sacrificial layer over a source/drain structure of a FinFET structure and an isolation insulating layer. The first sacrificial layer is patterned, thereby forming an opening. A first liner layer is formed on the isolation insulating layer in a bottom of the opening and on at least side faces of the patterned first sacrificial layer. After the first liner layer is formed, forming a dielectric layer in the opening. After the dielectric layer is formed, removing the patterned first sacrificial layer, thereby forming a contact opening over the source/drain structure. A conductive layer is formed in the contact opening. The FinFET is an n-type FET, and the source/drain structure includes an epitaxial layer including Si1−x−yM1xM2y, where M1 includes Sn, M2 is one or more of P and As, and 0.01≤x≤0.1, and 0.01≤y≤0.1."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including a Fin-FET and method of manufacturing the same","description":"A method of forming a semiconductor device including a fin field effect transistor (FinFET) includes forming a first sacrificial layer over a source/drain structure of a FinFET structure and an isolat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11251087","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11251087","citation_suggestion":"Patentable. \"Semiconductor device including a Fin-FET and method of manufacturing the same\" (US-11251087). https://patentable.app/patents/US-11251087","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11251087","json":"https://patentable.app/api/llm-context/US-11251087","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:16:23.677Z"}